Effect of non-lattice oxygen on ZrO(2)-based resistive switching memory

ZrO(2)-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO(2)/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO(2 )film is only 20 nm. The device yield improved by the non-lattice oxygen existing in the ZrO(2 )film deposited at room temperature is firstly proposed. The stable resistive switching behavior and the long retention time with a large current ratio are also observed. Furthermore, it is demonstrated that the resistive switching mechanism agrees with the formation and rupture of a conductive filament in the ZrO(2 )film. In addition, the Al/ZrO(2)/Pt resistive switching memory is also possible for application in flexible electronic equipment because it can be fully fabricated at room temperature.