Immobilization of enzyme and antibody on ALD-HfO(2)-EIS structure by NH(3 )plasma treatment

Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH(3 )plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobiliza...

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Detalles Bibliográficos
Autores principales: Wang, I-Shun, Lin, Yi-Ting, Huang, Chi-Hsien, Lu, Tseng-Fu, Lue, Cheng-En, Yang, Polung, Pijanswska, Dorota G, Yang, Chia-Ming, Wang, Jer-Chyi, Yu, Jau-Song, Chang, Yu-Sun, Chou, Chien, Lai, Chao-Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3329401/
https://www.ncbi.nlm.nih.gov/pubmed/22401350
http://dx.doi.org/10.1186/1556-276X-7-179
Descripción
Sumario:Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH(3 )plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using chemical procedures, remote NH(3 )plasma treatment reduces the processing steps and time. The results exhibited that urea and antigen can be successfully detected, which indicated that the immobilization process is correct.

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