Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy

Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and...

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Detalles Bibliográficos
Autores principales: Davydok, Anton, Breuer, Steffen, Biermanns, Andreas, Geelhaar, Lutz, Pietsch, Ullrich
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3329407/
https://www.ncbi.nlm.nih.gov/pubmed/22315928
http://dx.doi.org/10.1186/1556-276X-7-109

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3329407/
https://www.ncbi.nlm.nih.gov/pubmed/22315928
http://dx.doi.org/10.1186/1556-276X-7-109

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