Cargando…
Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy
Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3329407/ https://www.ncbi.nlm.nih.gov/pubmed/22315928 http://dx.doi.org/10.1186/1556-276X-7-109 |
_version_ | 1782229832960049152 |
---|---|
author | Davydok, Anton Breuer, Steffen Biermanns, Andreas Geelhaar, Lutz Pietsch, Ullrich |
author_facet | Davydok, Anton Breuer, Steffen Biermanns, Andreas Geelhaar, Lutz Pietsch, Ullrich |
author_sort | Davydok, Anton |
collection | PubMed |
description | Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and 1,800 s, we find a plastic strain release of about 75% close to the NW-to-substrate interface even at the initial state of growth, probably caused by the formation of a dislocation network at the Si-to-GaAs interface. In detail, we deduce that during the initial stage, zinc-blende structure GaAs islands grow with a gradually increasing lattice parameter over a transition region of several 10 nm in the growth direction. In contrast, accommodation of the in-plane lattice parameter takes place within a thickness of about 10 nm. As a consequence, the ratio between out-of-plane and in-plane lattice parameters is smaller than the unity in the initial state of growth. Finally the wurtzite-type NWs grow on top of the islands and are free of strain. |
format | Online Article Text |
id | pubmed-3329407 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-33294072012-04-20 Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy Davydok, Anton Breuer, Steffen Biermanns, Andreas Geelhaar, Lutz Pietsch, Ullrich Nanoscale Res Lett Nano Express Using out-of-plane and in-plane X-ray diffraction techniques, we have investigated the structure at the interface between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) substrate. Comparing the diffraction pattern measured at samples grown for 5, 60, and 1,800 s, we find a plastic strain release of about 75% close to the NW-to-substrate interface even at the initial state of growth, probably caused by the formation of a dislocation network at the Si-to-GaAs interface. In detail, we deduce that during the initial stage, zinc-blende structure GaAs islands grow with a gradually increasing lattice parameter over a transition region of several 10 nm in the growth direction. In contrast, accommodation of the in-plane lattice parameter takes place within a thickness of about 10 nm. As a consequence, the ratio between out-of-plane and in-plane lattice parameters is smaller than the unity in the initial state of growth. Finally the wurtzite-type NWs grow on top of the islands and are free of strain. Springer 2012-02-08 /pmc/articles/PMC3329407/ /pubmed/22315928 http://dx.doi.org/10.1186/1556-276X-7-109 Text en Copyright ©2012 Davydok et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Davydok, Anton Breuer, Steffen Biermanns, Andreas Geelhaar, Lutz Pietsch, Ullrich Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy |
title | Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy |
title_full | Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy |
title_fullStr | Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy |
title_full_unstemmed | Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy |
title_short | Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy |
title_sort | lattice parameter accommodation between gaas(111) nanowires and si(111) substrate after growth via au-assisted molecular beam epitaxy |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3329407/ https://www.ncbi.nlm.nih.gov/pubmed/22315928 http://dx.doi.org/10.1186/1556-276X-7-109 |
work_keys_str_mv | AT davydokanton latticeparameteraccommodationbetweengaas111nanowiresandsi111substrateaftergrowthviaauassistedmolecularbeamepitaxy AT breuersteffen latticeparameteraccommodationbetweengaas111nanowiresandsi111substrateaftergrowthviaauassistedmolecularbeamepitaxy AT biermannsandreas latticeparameteraccommodationbetweengaas111nanowiresandsi111substrateaftergrowthviaauassistedmolecularbeamepitaxy AT geelhaarlutz latticeparameteraccommodationbetweengaas111nanowiresandsi111substrateaftergrowthviaauassistedmolecularbeamepitaxy AT pietschullrich latticeparameteraccommodationbetweengaas111nanowiresandsi111substrateaftergrowthviaauassistedmolecularbeamepitaxy |