Gadolinium oxide nanocrystal nonvolatile memory with HfO(2)/Al(2)O(3 )nanostructure tunneling layers

In this study, Gd(2)O(3 )nanocrystal (Gd(2)O(3)-NC) memories with nanostructure tunneling layers are fabricated to examine their performance. A higher programming speed for Gd(2)O(3)-NC memories with nanostructure tunneling layers is obtained when compared with that of memories using a single tunnel...

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Detalles Bibliográficos
Autores principales: Wang, Jer-Chyi, Lin, Chih-Ting, Chen, Chia-Hsin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3329640/
https://www.ncbi.nlm.nih.gov/pubmed/22401176
http://dx.doi.org/10.1186/1556-276X-7-177

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3329640/
https://www.ncbi.nlm.nih.gov/pubmed/22401176
http://dx.doi.org/10.1186/1556-276X-7-177

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