Cargando…

Gadolinium oxide nanocrystal nonvolatile memory with HfO(2)/Al(2)O(3 )nanostructure tunneling layers

In this study, Gd(2)O(3 )nanocrystal (Gd(2)O(3)-NC) memories with nanostructure tunneling layers are fabricated to examine their performance. A higher programming speed for Gd(2)O(3)-NC memories with nanostructure tunneling layers is obtained when compared with that of memories using a single tunnel...

Descripción completa

Detalles Bibliográficos
Autores principales:	Wang, Jer-Chyi, Lin, Chih-Ting, Chen, Chia-Hsin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2012
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3329640/ https://www.ncbi.nlm.nih.gov/pubmed/22401176 http://dx.doi.org/10.1186/1556-276X-7-177

Ejemplares similares

Synthesis of freestanding HfO(2 )nanostructures
por: Kidd, Timothy, et al.
Publicado: (2011)

Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO(2) blocking layer
por: Tang, Ruifan, et al.
Publicado: (2013)

Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO(2)/SiO(2 )stack tunnel dielectrics for memory application
por: Sahu, Bhabani Shankar, et al.
Publicado: (2011)

Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
por: Zhang, Wei, et al.
Publicado: (2017)

Morphology and Photoluminescence of HfO(2)Obtained by Microwave-Hydrothermal
por: Eliziário, SA, et al.
Publicado: (2009)

Crossbar Nanoscale HfO(2)-Based Electronic Synapses
por: Matveyev, Yury, et al.
Publicado: (2016)

Immobilization of enzyme and antibody on ALD-HfO(2)-EIS structure by NH(3 )plasma treatment
por: Wang, I-Shun, et al.
Publicado: (2012)

III-Nitride grating grown on freestanding HfO(2 )gratings
por: Wang, Yongjin, et al.
Publicado: (2011)

Synthesis and White-Light Emission of ZnO/HfO(2): Eu Nanocables
por: Liu, Lixin, et al.
Publicado: (2010)

Investigation of Nitridation on the Band Alignment at MoS(2)/HfO(2) Interfaces
por: Huan, Ya-Wei, et al.
Publicado: (2019)

Freestanding HfO(2 )grating fabricated by fast atom beam etching
por: Wang, Yongjin, et al.
Publicado: (2011)

Atomic layer deposition for fabrication of HfO(2)/Al(2)O(3) thin films with high laser-induced damage thresholds
por: Wei, Yaowei, et al.
Publicado: (2015)

Low-Power Resistive Switching Characteristic in HfO(2)/TiO(x) Bi-Layer Resistive Random-Access Memory
por: Ding, Xiangxiang, et al.
Publicado: (2019)

Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al(2)O(3)/HfO(2) tunnel oxide
por: El-Atab, Nazek, et al.
Publicado: (2015)

Conduction Mechanism and Improved Endurance in HfO(2)-Based RRAM with Nitridation Treatment
por: Yuan, Fang-Yuan, et al.
Publicado: (2017)

Temperature-Dependent HfO(2)/Si Interface Structural Evolution and its Mechanism
por: Zhang, Xiao-Ying, et al.
Publicado: (2019)

Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta(2)O(5)/HfO(2-x)/Hf Stack
por: Ma, Haili, et al.
Publicado: (2017)

Surface Passivation of Silicon Using HfO(2) Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
por: Zhang, Xiao-Ying, et al.
Publicado: (2017)

Statistical characteristics of reset switching in Cu/HfO(2)/Pt resistive switching memory
por: Zhang, Meiyun, et al.
Publicado: (2014)

A Multi-level Memristor Based on Al-Doped HfO(2) Thin Film
por: Wu, Lei, et al.
Publicado: (2019)

Interfacial, Electrical, and Band Alignment Characteristics of HfO(2)/Ge Stacks with In Situ-Formed SiO(2) Interlayer by Plasma-Enhanced Atomic Layer Deposition
por: Cao, Yan-Qiang, et al.
Publicado: (2017)

Excellent resistive switching properties of atomic layer-deposited Al(2)O(3)/HfO(2)/Al(2)O(3) trilayer structures for non-volatile memory applications
por: Wang, Lai-Guo, et al.
Publicado: (2015)

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device
por: Zhang, Meiyun, et al.
Publicado: (2016)

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO(2)/Pt Resistive Switching Memory
por: Li, Leilei, et al.
Publicado: (2017)

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO(2) Film
por: Peng, Yue, et al.
Publicado: (2022)

Effect of Ag Concentration Dispersed in HfO(x) Thin Films on Threshold Switching
por: Jeong, Won Hee, et al.
Publicado: (2020)

High-performance HfO(x)/AlO(y)-based resistive switching memory cross-point array fabricated by atomic layer deposition
por: Chen, Zhe, et al.
Publicado: (2015)

Retention Model of TaO/HfO(x) and TaO/AlO(x) RRAM with Self-Rectifying Switch Characteristics
por: Lin, Yu-De, et al.
Publicado: (2017)

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO(2)/TiN Structure for CMOS Applications
por: Xu, Da-Peng, et al.
Publicado: (2017)

The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO(2)-Based RRAM and Applications for Pattern Recognition
por: Zhou, Zheng, et al.
Publicado: (2017)

Fabrication of HfO(2 )patterns by laser interference nanolithography and selective dry etching for III-V CMOS application
por: Benedicto, Marcos, et al.
Publicado: (2011)

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO(2) Defect Control Layer
por: Tan, Qiuhong, et al.
Publicado: (2018)

Impact of electrically formed interfacial layer and improved memory characteristics of IrO(x)/high-κ(x)/W structures containing AlO(x), GdO(x), HfO(x), and TaO(x) switching materials
por: Prakash, Amit, et al.
Publicado: (2013)

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO(x)/ZnO(x)/TiN Memristive System
por: Wang, Lai-Guo, et al.
Publicado: (2017)

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO(2)/Al(2)O(3)-Based Charge Trapping Layers
por: Spassov, Dencho, et al.
Publicado: (2022)

Atomic layer deposition of high-density Pt nanodots on Al(2)O(3) film using (MeCp)Pt(Me)(3) and O(2) precursors for nonvolatile memory applications
por: Ding, Shi-Jin, et al.
Publicado: (2013)

Electronic Structure and Charge-Trapping Characteristics of the Al(2)O(3)-TiAlO-SiO(2) Gate Stack for Nonvolatile Memory Applications
por: Xu, Wenchao, et al.
Publicado: (2017)

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO(2)) Devices via Sol-Gel Method Stacking Tri-Layer HfO(2)/Al-ZnO/HfO(2) Structures
por: Xu, Yuan-Dong, et al.
Publicado: (2022)

Femtosecond Carrier Dynamics in In(2)O(3)Nanocrystals
por: Othonos, Andreas, et al.
Publicado: (2009)

Selective preparation of zero- and one-dimensional gold nanostructures in a TiO(2 )nanocrystal-containing photoactive mesoporous template
por: Kawamura, Go, et al.
Publicado: (2012)

Cannot write session to /tmp/vufind_sessions/sess_esmf3rctoqfq9g31c0uqf3n9n8