Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrO(x )nano-dots

Improved resistive switching memory characteristics by controlling the formation polarity in an IrO(x)/Al(2)O(3)/IrO(x)-ND/Al(2)O(3)/WO(x)/W structure have been investigated. High density of 1 × 10(13)/cm(2 )and small size of 1.3 nm in diameter of the IrO(x )nano-dots (NDs) have been observed by hig...

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Detalles Bibliográficos
Autores principales: Banerjee, Writam, Maikap, Siddheswar, Lai, Chao-Sung, Chen, Yi-Yan, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn, Yang, Jer-Ren
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3338378/
https://www.ncbi.nlm.nih.gov/pubmed/22439604
http://dx.doi.org/10.1186/1556-276X-7-194

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3338378/
https://www.ncbi.nlm.nih.gov/pubmed/22439604
http://dx.doi.org/10.1186/1556-276X-7-194

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