A high-performance quantum dot superluminescent diode with a two-section structure

Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum o...

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Detalles Bibliográficos
Autores principales: Li, Xinkun, Jin, Peng, An, Qi, Wang, Zuocai, Lv, Xueqin, Wei, Heng, Wu, Jian, Wu, Ju, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3339635/
https://www.ncbi.nlm.nih.gov/pubmed/22152015
http://dx.doi.org/10.1186/1556-276X-6-625

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3339635/
https://www.ncbi.nlm.nih.gov/pubmed/22152015
http://dx.doi.org/10.1186/1556-276X-6-625

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