Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics

In this paper, we investigate the formation kinetics of Si nanowires [SiNWs] on lithographically defined areas using a single-step metal-assisted chemical etching process in an aqueous HF/AgNO(3 )solution. We show that the etch rate of Si, and consequently, the SiNW length, is much higher on the lit...

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Detalles Bibliográficos
Autores principales: Nassiopoulou, Androula Galiouna, Gianneta, Violetta, Katsogridakis, Charalambos
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2011
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3339842/
https://www.ncbi.nlm.nih.gov/pubmed/22087735
http://dx.doi.org/10.1186/1556-276X-6-597

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3339842/
https://www.ncbi.nlm.nih.gov/pubmed/22087735
http://dx.doi.org/10.1186/1556-276X-6-597

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