Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxid...

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Detalles Bibliográficos
Autores principales: Peng, Hai Yang, Li, Yong Feng, Lin, Wei Nan, Wang, Yu Zhan, Gao, Xing Yu, Wu, Tom
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3369197/
https://www.ncbi.nlm.nih.gov/pubmed/22679556
http://dx.doi.org/10.1038/srep00442

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3369197/
https://www.ncbi.nlm.nih.gov/pubmed/22679556
http://dx.doi.org/10.1038/srep00442

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