Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?

Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve...

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Detalles Bibliográficos
Autores principales: Fahad, Hossain M., Hussain, Muhammad M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3384075/
https://www.ncbi.nlm.nih.gov/pubmed/22741059
http://dx.doi.org/10.1038/srep00475

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3384075/
https://www.ncbi.nlm.nih.gov/pubmed/22741059
http://dx.doi.org/10.1038/srep00475

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