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Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?
Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3384075/ https://www.ncbi.nlm.nih.gov/pubmed/22741059 http://dx.doi.org/10.1038/srep00475 |
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author | Fahad, Hossain M. Hussain, Muhammad M. |
author_facet | Fahad, Hossain M. Hussain, Muhammad M. |
author_sort | Fahad, Hossain M. |
collection | PubMed |
description | Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation. |
format | Online Article Text |
id | pubmed-3384075 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-33840752012-06-27 Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors? Fahad, Hossain M. Hussain, Muhammad M. Sci Rep Article Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation. Nature Publishing Group 2012-06-27 /pmc/articles/PMC3384075/ /pubmed/22741059 http://dx.doi.org/10.1038/srep00475 Text en Copyright © 2012, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-No Derivative Works 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/ |
spellingShingle | Article Fahad, Hossain M. Hussain, Muhammad M. Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors? |
title | Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors? |
title_full | Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors? |
title_fullStr | Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors? |
title_full_unstemmed | Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors? |
title_short | Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors? |
title_sort | are nanotube architectures more advantageous than nanowire architectures for field effect transistors? |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3384075/ https://www.ncbi.nlm.nih.gov/pubmed/22741059 http://dx.doi.org/10.1038/srep00475 |
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