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Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?
Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3384075/ https://www.ncbi.nlm.nih.gov/pubmed/22741059 http://dx.doi.org/10.1038/srep00475 |