Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum

One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO(2) surfaces. Moreover,...

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Detalles Bibliográficos
Autores principales: Xu, Xiangdong, Li, Shibin, Wang, Yinchuan, Fan, Taijun, Jiang, Yadong, Huang, Long, He, Qiong, Ao, Tianhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3403976/
https://www.ncbi.nlm.nih.gov/pubmed/22559207
http://dx.doi.org/10.1186/1556-276X-7-243

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3403976/
https://www.ncbi.nlm.nih.gov/pubmed/22559207
http://dx.doi.org/10.1186/1556-276X-7-243

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