Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum

One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO(2) surfaces. Moreover,...

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Detalles Bibliográficos
Autores principales: Xu, Xiangdong, Li, Shibin, Wang, Yinchuan, Fan, Taijun, Jiang, Yadong, Huang, Long, He, Qiong, Ao, Tianhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3403976/
https://www.ncbi.nlm.nih.gov/pubmed/22559207
http://dx.doi.org/10.1186/1556-276X-7-243
Descripción
Sumario:One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO(2) surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can be grown on SiO(2) surfaces, not on Si surfaces. This work reveals the methods of producing large-scale SiNWs in UHV.

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