Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum

One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO(2) surfaces. Moreover,...

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Detalles Bibliográficos
Autores principales: Xu, Xiangdong, Li, Shibin, Wang, Yinchuan, Fan, Taijun, Jiang, Yadong, Huang, Long, He, Qiong, Ao, Tianhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3403976/
https://www.ncbi.nlm.nih.gov/pubmed/22559207
http://dx.doi.org/10.1186/1556-276X-7-243
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author Xu, Xiangdong
Li, Shibin
Wang, Yinchuan
Fan, Taijun
Jiang, Yadong
Huang, Long
He, Qiong
Ao, Tianhong
author_facet Xu, Xiangdong
Li, Shibin
Wang, Yinchuan
Fan, Taijun
Jiang, Yadong
Huang, Long
He, Qiong
Ao, Tianhong
author_sort Xu, Xiangdong
collection PubMed
description One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO(2) surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can be grown on SiO(2) surfaces, not on Si surfaces. This work reveals the methods of producing large-scale SiNWs in UHV.
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spelling pubmed-34039762012-07-25 Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum Xu, Xiangdong Li, Shibin Wang, Yinchuan Fan, Taijun Jiang, Yadong Huang, Long He, Qiong Ao, Tianhong Nanoscale Res Lett Nano Express One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO(2) surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can be grown on SiO(2) surfaces, not on Si surfaces. This work reveals the methods of producing large-scale SiNWs in UHV. Springer 2012-05-06 /pmc/articles/PMC3403976/ /pubmed/22559207 http://dx.doi.org/10.1186/1556-276X-7-243 Text en Copyright ©2012 Xu et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Xu, Xiangdong
Li, Shibin
Wang, Yinchuan
Fan, Taijun
Jiang, Yadong
Huang, Long
He, Qiong
Ao, Tianhong
Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
title Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
title_full Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
title_fullStr Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
title_full_unstemmed Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
title_short Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
title_sort silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3403976/
https://www.ncbi.nlm.nih.gov/pubmed/22559207
http://dx.doi.org/10.1186/1556-276X-7-243
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