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Silicon nanowires prepared by electron beam evaporation in ultrahigh vacuum
One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor–liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO(2) surfaces. Moreover,...
Autores principales: | Xu, Xiangdong, Li, Shibin, Wang, Yinchuan, Fan, Taijun, Jiang, Yadong, Huang, Long, He, Qiong, Ao, Tianhong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3403976/ https://www.ncbi.nlm.nih.gov/pubmed/22559207 http://dx.doi.org/10.1186/1556-276X-7-243 |
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