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Linear magnetoresistance in n-type silicon due to doping density fluctuations
We report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer with a P dopant density of (1.4±0.1) ×10(15) cm(–3), and report measurements of it in the temperature range 30–200 K. It arises from the deformation of current paths, whic...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3413879/ https://www.ncbi.nlm.nih.gov/pubmed/22876340 http://dx.doi.org/10.1038/srep00565 |