Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique

GaN-based light emitting diodes (LEDs) fabricated on sapphire substrates were successfully transferred onto silicon substrates using a double-transfer technique. Compared with the conventional LEDs on sapphire, the transferred LEDs showed a significant improvement in the light extraction and thermal...

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Detalles Bibliográficos
Autores principales: Zhang, Jiang-Yong, Liu, Wen-Jie, Chen, Ming, Hu, Xiao-Long, Lv, Xue-Qin, Ying, Lei-Ying, Zhang, Bao-Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3420328/
https://www.ncbi.nlm.nih.gov/pubmed/22559228
http://dx.doi.org/10.1186/1556-276X-7-244

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3420328/
https://www.ncbi.nlm.nih.gov/pubmed/22559228
http://dx.doi.org/10.1186/1556-276X-7-244

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