Cargando…

Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique

GaN-based light emitting diodes (LEDs) fabricated on sapphire substrates were successfully transferred onto silicon substrates using a double-transfer technique. Compared with the conventional LEDs on sapphire, the transferred LEDs showed a significant improvement in the light extraction and thermal...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhang, Jiang-Yong, Liu, Wen-Jie, Chen, Ming, Hu, Xiao-Long, Lv, Xue-Qin, Ying, Lei-Ying, Zhang, Bao-Ping
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2012
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3420328/ https://www.ncbi.nlm.nih.gov/pubmed/22559228 http://dx.doi.org/10.1186/1556-276X-7-244

Ejemplares similares

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching
por: Chen, Lung-Chien, et al.
Publicado: (2013)

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
por: Lee, Chia-Yu, et al.
Publicado: (2014)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
por: Tsai, Ming-Ta, et al.
Publicado: (2014)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
por: Lin, Meng-Hung, et al.
Publicado: (2010)

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
por: Sun, Tao, et al.
Publicado: (2020)

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode
por: Sadaf, JR, et al.
Publicado: (2010)

Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes
por: Ge, Hai-Liang, et al.
Publicado: (2015)

Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer
por: Dong, Jing-Jing, et al.
Publicado: (2014)

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing
por: Lai, Fang-I, et al.
Publicado: (2013)

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
por: Alvi, N H, et al.
Publicado: (2011)

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction
por: Du, Chia-Fong, et al.
Publicado: (2014)

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode
por: Jung, Byung Oh, et al.
Publicado: (2016)

Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
por: Chao, Szu-Han, et al.
Publicado: (2020)

Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes
por: Alvi, Naveed ul Hassan, et al.
Publicado: (2011)

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
por: Salomon, Damien, et al.
Publicado: (2013)

Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading
por: Chang, Le, et al.
Publicado: (2020)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
por: Lin, Tao, et al.
Publicado: (2018)

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
por: Tsykaniuk, Bogdan I., et al.
Publicado: (2017)

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence
por: Abbasi, Mazhar Ali, et al.
Publicado: (2013)

AlGaInP light-emitting diodes with SACNTs as current-spreading layer
por: Guo, Xia, et al.
Publicado: (2014)

Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
por: Gu, Hong, et al.
Publicado: (2019)

Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs
por: You, Yao-Hong, et al.
Publicado: (2014)

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates
por: Kumar, Ashutosh, et al.
Publicado: (2018)

Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes
por: Yang, Fann-Wei, et al.
Publicado: (2017)

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2018)

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns
por: Barbagini, Francesca, et al.
Publicado: (2011)

GaN nanorods grown on Si (111) substrates and exciton localization
por: Park, Young S, et al.
Publicado: (2011)

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study
por: Kuchuk, Andrian V., et al.
Publicado: (2016)

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures
por: Ryu, Han-Youl
Publicado: (2014)

Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
por: Hu, Jiahui, et al.
Publicado: (2019)

Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy
por: Li, Heng, et al.
Publicado: (2017)

Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures
por: Tan, Shuxin, et al.
Publicado: (2018)

Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2019)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells
por: Zhao, Wan-Ru, et al.
Publicado: (2015)

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
por: Zhong, Aihua, et al.
Publicado: (2012)

Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
por: Kladko, Vasyl, et al.
Publicado: (2012)

Cannot write session to /tmp/vufind_sessions/sess_i86ih53fk3q9p2b731tm63noqr