Nucleation control for the growth of vertically aligned GaN nanowires

Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matc...

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Detalles Bibliográficos
Autores principales: Hou, Wen-Chi, Wu, Tung-Hsien, Tang, Wei-Che, Hong, Franklin Chau-Nan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3432621/
https://www.ncbi.nlm.nih.gov/pubmed/22768872
http://dx.doi.org/10.1186/1556-276X-7-373

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3432621/
https://www.ncbi.nlm.nih.gov/pubmed/22768872
http://dx.doi.org/10.1186/1556-276X-7-373

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