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Morphological and nanostructural features of porous silicon prepared by electrochemical etching

Porous layers were produced on a p-type (100) Si wafer by electrochemical anodic etching. The morphological, nanostructural and optical features of the porous Si were investigated as functions of the etching conditions. As the wafer resistivity was increased from 0.005 to 15 Ω·cm, the etched region...

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Detalles Bibliográficos
Autores principales: Kim, Hyohan, Cho, Namhee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3432630/
https://www.ncbi.nlm.nih.gov/pubmed/22818179
http://dx.doi.org/10.1186/1556-276X-7-408