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Morphological and nanostructural features of porous silicon prepared by electrochemical etching
Porous layers were produced on a p-type (100) Si wafer by electrochemical anodic etching. The morphological, nanostructural and optical features of the porous Si were investigated as functions of the etching conditions. As the wafer resistivity was increased from 0.005 to 15 Ω·cm, the etched region...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3432630/ https://www.ncbi.nlm.nih.gov/pubmed/22818179 http://dx.doi.org/10.1186/1556-276X-7-408 |