Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface

Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaO(x)/W structure with a Ti nanolayer at the Cu/TaO(x) interface under low voltage operation of ± 1.5 V and a range of current compliances (CCs) from 0.1 to 500 μA. Oxygen accumulation at the Ti nanolayer and for...

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Detalles Bibliográficos
Autores principales: Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3436867/
https://www.ncbi.nlm.nih.gov/pubmed/22734564
http://dx.doi.org/10.1186/1556-276X-7-345

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3436867/
https://www.ncbi.nlm.nih.gov/pubmed/22734564
http://dx.doi.org/10.1186/1556-276X-7-345

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