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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface

Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaO(x)/W structure with a Ti nanolayer at the Cu/TaO(x) interface under low voltage operation of ± 1.5 V and a range of current compliances (CCs) from 0.1 to 500 μA. Oxygen accumulation at the Ti nanolayer and for...

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Autores principales: Rahaman, Sheikh Ziaur, Maikap, Siddheswar, Tien, Ta-Chang, Lee, Heng-Yuan, Chen, Wei-Su, Chen, Frederick T, Kao, Ming-Jer, Tsai, Ming-Jinn
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3436867/
https://www.ncbi.nlm.nih.gov/pubmed/22734564
http://dx.doi.org/10.1186/1556-276X-7-345
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author Rahaman, Sheikh Ziaur
Maikap, Siddheswar
Tien, Ta-Chang
Lee, Heng-Yuan
Chen, Wei-Su
Chen, Frederick T
Kao, Ming-Jer
Tsai, Ming-Jinn
author_facet Rahaman, Sheikh Ziaur
Maikap, Siddheswar
Tien, Ta-Chang
Lee, Heng-Yuan
Chen, Wei-Su
Chen, Frederick T
Kao, Ming-Jer
Tsai, Ming-Jinn
author_sort Rahaman, Sheikh Ziaur
collection PubMed
description Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaO(x)/W structure with a Ti nanolayer at the Cu/TaO(x) interface under low voltage operation of ± 1.5 V and a range of current compliances (CCs) from 0.1 to 500 μA. Oxygen accumulation at the Ti nanolayer and formation of a defective high-κ TaO(x) film were confirmed by high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, and X-ray photo-electron spectroscopy. The resistive switching memory characteristics of the Al/Cu/Ti/TaO(x)/W structure, such as HRS/LRS (approximately 10(4)), stable switching cycle stability (>10(6)) and multi-level operation, were improved compared with those of Al/Cu/TaO(x)/W devices. These results were attributed to the control of Cu migration/dissolution by the insertion of a Ti nanolayer at the Cu/TaO(x) interface. In contrast, CuO(x) formation at the Cu/TaO(x) interface was observed in an Al/Cu/TaO(x)/W structure, which hindered dissolution of the Cu filament and resulted in a small resistance ratio of approximately 10 at a CC of 500 μA. A high charge-trapping density of 6.9 × 10(16) /cm(2) was observed in the Al/Cu/Ti/TaO(x)/W structure from capacitance-voltage hysteresis characteristics, indicating the migration of Cu ions through defect sites. The switching mechanism was successfully explained for structures with and without the Ti nanolayer. By using a new approach, the nanoscale diameter of Cu filament decreased from 10.4 to 0.17 nm as the CC decreased from 500 to 0.1 μA, resulting in a large memory size of 7.6 T to 28 Pbit/sq in. Extrapolated 10-year data retention of the Ti nanolayer device was also obtained. The findings of this study will not only improve resistive switching memory performance but also aid future design of nanoscale nonvolatile memory.
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spelling pubmed-34368672012-09-26 Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface Rahaman, Sheikh Ziaur Maikap, Siddheswar Tien, Ta-Chang Lee, Heng-Yuan Chen, Wei-Su Chen, Frederick T Kao, Ming-Jer Tsai, Ming-Jinn Nanoscale Res Lett Nano Express Excellent resistive switching memory characteristics were demonstrated for an Al/Cu/Ti/TaO(x)/W structure with a Ti nanolayer at the Cu/TaO(x) interface under low voltage operation of ± 1.5 V and a range of current compliances (CCs) from 0.1 to 500 μA. Oxygen accumulation at the Ti nanolayer and formation of a defective high-κ TaO(x) film were confirmed by high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, and X-ray photo-electron spectroscopy. The resistive switching memory characteristics of the Al/Cu/Ti/TaO(x)/W structure, such as HRS/LRS (approximately 10(4)), stable switching cycle stability (>10(6)) and multi-level operation, were improved compared with those of Al/Cu/TaO(x)/W devices. These results were attributed to the control of Cu migration/dissolution by the insertion of a Ti nanolayer at the Cu/TaO(x) interface. In contrast, CuO(x) formation at the Cu/TaO(x) interface was observed in an Al/Cu/TaO(x)/W structure, which hindered dissolution of the Cu filament and resulted in a small resistance ratio of approximately 10 at a CC of 500 μA. A high charge-trapping density of 6.9 × 10(16) /cm(2) was observed in the Al/Cu/Ti/TaO(x)/W structure from capacitance-voltage hysteresis characteristics, indicating the migration of Cu ions through defect sites. The switching mechanism was successfully explained for structures with and without the Ti nanolayer. By using a new approach, the nanoscale diameter of Cu filament decreased from 10.4 to 0.17 nm as the CC decreased from 500 to 0.1 μA, resulting in a large memory size of 7.6 T to 28 Pbit/sq in. Extrapolated 10-year data retention of the Ti nanolayer device was also obtained. The findings of this study will not only improve resistive switching memory performance but also aid future design of nanoscale nonvolatile memory. Springer 2012-06-26 /pmc/articles/PMC3436867/ /pubmed/22734564 http://dx.doi.org/10.1186/1556-276X-7-345 Text en Copyright ©2012 Rahaman et al.; licensee BioMed Central Ltd. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Rahaman, Sheikh Ziaur
Maikap, Siddheswar
Tien, Ta-Chang
Lee, Heng-Yuan
Chen, Wei-Su
Chen, Frederick T
Kao, Ming-Jer
Tsai, Ming-Jinn
Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface
title Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface
title_full Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface
title_fullStr Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface
title_full_unstemmed Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface
title_short Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface
title_sort excellent resistive memory characteristics and switching mechanism using a ti nanolayer at the cu/tao(x) interface
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3436867/
https://www.ncbi.nlm.nih.gov/pubmed/22734564
http://dx.doi.org/10.1186/1556-276X-7-345
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