Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion

GeSi nanoislands grown on nanotip pre-patterned Si substrates at various temperatures are investigated. Nanoislands with a high density and narrow size distribution can be obtained within an intermediate temperature range, and the Ge atom diffusion length is comparable to half of the average distanc...

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Detalles Bibliográficos
Autores principales: Tang, Ruifan, Huang, Kai, Lai, Hongkai, Li, Cheng, Wu, Zhiming, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3442980/
https://www.ncbi.nlm.nih.gov/pubmed/22734613
http://dx.doi.org/10.1186/1556-276X-7-346

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3442980/
https://www.ncbi.nlm.nih.gov/pubmed/22734613
http://dx.doi.org/10.1186/1556-276X-7-346

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