Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained...

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Detalles Bibliográficos
Autores principales: Tan, Michael Loong Peng, Lentaris, Georgios, Amaratunga AJ, Gehan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3457859/
https://www.ncbi.nlm.nih.gov/pubmed/22901374
http://dx.doi.org/10.1186/1556-276X-7-467

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3457859/
https://www.ncbi.nlm.nih.gov/pubmed/22901374
http://dx.doi.org/10.1186/1556-276X-7-467

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