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Computational simulation of the effects of oxygen on the electronic states of hydrogenated 3C-porous SiC
A computational study of the dependence of the electronic band structure and density of states on the chemical surface passivation of cubic porous silicon carbide (pSiC) was performed using ab initio density functional theory and the supercell method. The effects of the porosity and the surface chem...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3462725/ https://www.ncbi.nlm.nih.gov/pubmed/22913486 http://dx.doi.org/10.1186/1556-276X-7-471 |