Increased conductance of individual self-assembled GeSi quantum dots by inter-dot coupling studied by conductive atomic force microscopy

The conductive properties of individual self-assembled GeSi quantum dots (QDs) are investigated by conductive atomic force microscopy on single-layer (SL) and bi-layer (BL) GeSi QDs with different dot densities at room temperature. By comparing their average currents, it is found that the BL and hig...

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Detalles Bibliográficos
Autores principales: Zhang, Yifei, Ye, Fengfeng, Lin, Jianhui, Jiang, Zuimin, Yang, Xinju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3463465/
https://www.ncbi.nlm.nih.gov/pubmed/22650414
http://dx.doi.org/10.1186/1556-276X-7-278

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3463465/
https://www.ncbi.nlm.nih.gov/pubmed/22650414
http://dx.doi.org/10.1186/1556-276X-7-278

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