Isothermal close space sublimation for II-VI semiconductor filling of porous matrices

Isothermal close space sublimation, a simple and low-cost physical vapour transport technique, was used to infiltrate ZnTe and CdSe semiconductors in porous silicon. The structure of the embedded materials was determined by X-ray diffraction analysis while Rutherford backscattering spectra allowed d...

Descripción completa

Detalles Bibliográficos
Autores principales: Torres-Costa, Vicente, de Melo, Claudia, Climent-Font, Aurelio, Argulló-Rueda, Fernando, de Melo, Osvaldo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3466128/
https://www.ncbi.nlm.nih.gov/pubmed/22823959
http://dx.doi.org/10.1186/1556-276X-7-409

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3466128/
https://www.ncbi.nlm.nih.gov/pubmed/22823959
http://dx.doi.org/10.1186/1556-276X-7-409

Ejemplares similares