High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (T(Fin)/W(F...

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Detalles Bibliográficos
Autores principales: Chen, Szu-Hung, Liao, Wen-Shiang, Yang, Hsin-Chia, Wang, Shea-Jue, Liaw, Yue-Gie, Wang, Hao, Gu, Haoshuang, Wang, Mu-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3466142/
https://www.ncbi.nlm.nih.gov/pubmed/22853458
http://dx.doi.org/10.1186/1556-276X-7-431

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3466142/
https://www.ncbi.nlm.nih.gov/pubmed/22853458
http://dx.doi.org/10.1186/1556-276X-7-431

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