Dynamic-Load-Enabled Ultra-low Power Multiple-State RRAM Devices

Bipolar resistance-switching materials allowing intermediate states of wide-varying resistance values hold the potential of drastically reduced power for non-volatile memory. To exploit this potential, we have introduced into a nanometallic resistance-random-access-memory (RRAM) device an asymmetric...

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Detalles Bibliográficos
Autores principales: Yang, Xiang, Chen, I-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3473363/
https://www.ncbi.nlm.nih.gov/pubmed/23077728
http://dx.doi.org/10.1038/srep00744

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3473363/
https://www.ncbi.nlm.nih.gov/pubmed/23077728
http://dx.doi.org/10.1038/srep00744

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