Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing

Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxyge...

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Detalles Bibliográficos
Autores principales: Khalifa, Marouan, Hajji, Messaoud, Ezzaouia, Hatem
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3475061/
https://www.ncbi.nlm.nih.gov/pubmed/22873706
http://dx.doi.org/10.1186/1556-276X-7-444
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author Khalifa, Marouan
Hajji, Messaoud
Ezzaouia, Hatem
author_facet Khalifa, Marouan
Hajji, Messaoud
Ezzaouia, Hatem
author_sort Khalifa, Marouan
collection PubMed
description Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C.
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spelling pubmed-34750612012-10-22 Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing Khalifa, Marouan Hajji, Messaoud Ezzaouia, Hatem Nanoscale Res Lett Nano Express Porous silicon has been prepared using a vapor-etching based technique on a commercial silicon powder. Strong visible emission was observed in all samples. Obtained silicon powder with a thin porous layer at the surface was subjected to a photo-thermal annealing at different temperatures under oxygen atmosphere followed by a chemical treatment. Inductively coupled plasma atomic emission spectrometry results indicate that silicon purity is improved from 99.1% to 99.994% after annealing at 900°C. Springer 2012-08-08 /pmc/articles/PMC3475061/ /pubmed/22873706 http://dx.doi.org/10.1186/1556-276X-7-444 Text en Copyright ©2012 Khalifa et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Khalifa, Marouan
Hajji, Messaoud
Ezzaouia, Hatem
Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing
title Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing
title_full Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing
title_fullStr Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing
title_full_unstemmed Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing
title_short Purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing
title_sort purification of silicon powder by the formation of thin porous layer followed byphoto-thermal annealing
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3475061/
https://www.ncbi.nlm.nih.gov/pubmed/22873706
http://dx.doi.org/10.1186/1556-276X-7-444
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