Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Using measured capacitance-voltage curves with different gate lengths and current–voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) of different drain-to-source distances, we found that the dominant scattering mechanism in A...

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Detalles Bibliográficos
Autores principales: Lv, Yuanjie, Lin, Zhaojun, Meng, Lingguo, Luan, Chongbiao, Cao, Zhifang, Yu, Yingxia, Feng, Zhihong, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3477020/
https://www.ncbi.nlm.nih.gov/pubmed/22856465
http://dx.doi.org/10.1186/1556-276X-7-434

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3477020/
https://www.ncbi.nlm.nih.gov/pubmed/22856465
http://dx.doi.org/10.1186/1556-276X-7-434

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