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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
Using measured capacitance-voltage curves with different gate lengths and current–voltage characteristics at low drain-to-source voltage for the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) of different drain-to-source distances, we found that the dominant scattering mechanism in A...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3477020/ https://www.ncbi.nlm.nih.gov/pubmed/22856465 http://dx.doi.org/10.1186/1556-276X-7-434 |