The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs

We report the temperature-dependent photoluminescence of single site-controlled and self-assembled InAs quantum dots. We have used nanoimprint lithography for patterning GaAs(100) templates and molecular beam epitaxy for quantum dot deposition. We show that the influence of the temperature on the ph...

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Detalles Bibliográficos
Autores principales: Tommila, Juha, Strelow, Christian, Schramm, Andreas, Hakkarainen, Teemu V, Dumitrescu, Mihail, Kipp, Tobias, Guina, Mircea
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3479032/
https://www.ncbi.nlm.nih.gov/pubmed/22713215
http://dx.doi.org/10.1186/1556-276X-7-313

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3479032/
https://www.ncbi.nlm.nih.gov/pubmed/22713215
http://dx.doi.org/10.1186/1556-276X-7-313

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