Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases wh...

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Detalles Bibliográficos
Autores principales: Khalil, Hagir M, Royall, Ben, Mazzucato, Simone, Balkan, Naci
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3479062/
https://www.ncbi.nlm.nih.gov/pubmed/23021540
http://dx.doi.org/10.1186/1556-276X-7-539

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3479062/
https://www.ncbi.nlm.nih.gov/pubmed/23021540
http://dx.doi.org/10.1186/1556-276X-7-539

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