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Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures
The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases wh...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3479062/ https://www.ncbi.nlm.nih.gov/pubmed/23021540 http://dx.doi.org/10.1186/1556-276X-7-539 |