High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of...

Descripción completa

Detalles Bibliográficos
Autores principales: Hu, Jia-Mian, Li, Zheng, Chen, Long-Qing, Nan, Ce-Wen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2011
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3482632/
https://www.ncbi.nlm.nih.gov/pubmed/22109527
http://dx.doi.org/10.1038/ncomms1564

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3482632/
https://www.ncbi.nlm.nih.gov/pubmed/22109527
http://dx.doi.org/10.1038/ncomms1564

Ejemplares similares