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High-density magnetoresistive random access memory operating at ultralow voltage at room temperature
The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Pub. Group
2011
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3482632/ https://www.ncbi.nlm.nih.gov/pubmed/22109527 http://dx.doi.org/10.1038/ncomms1564 |