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The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing
Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3487986/ https://www.ncbi.nlm.nih.gov/pubmed/22709630 http://dx.doi.org/10.1186/1556-276X-7-307 |