The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing

Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced...

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Detalles Bibliográficos
Autores principales: Lee, Min-Hung, Chen, Pin-Guang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3487986/
https://www.ncbi.nlm.nih.gov/pubmed/22709630
http://dx.doi.org/10.1186/1556-276X-7-307
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author Lee, Min-Hung
Chen, Pin-Guang
author_facet Lee, Min-Hung
Chen, Pin-Guang
author_sort Lee, Min-Hung
collection PubMed
description Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.
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spelling pubmed-34879862012-11-05 The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing Lee, Min-Hung Chen, Pin-Guang Nanoscale Res Lett Nano Express Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken. Springer 2012-06-18 /pmc/articles/PMC3487986/ /pubmed/22709630 http://dx.doi.org/10.1186/1556-276X-7-307 Text en Copyright ©2012 Lee and Chen; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Lee, Min-Hung
Chen, Pin-Guang
The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing
title The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing
title_full The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing
title_fullStr The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing
title_full_unstemmed The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing
title_short The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing
title_sort investigation of selective pre-pattern free self-assembled ge nano-dot formed by excimer laser annealing
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3487986/
https://www.ncbi.nlm.nih.gov/pubmed/22709630
http://dx.doi.org/10.1186/1556-276X-7-307
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