Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowi...

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Detalles Bibliográficos
Autores principales: Dehzangi, Arash, Abdullah, A Makarimi, Larki, Farhad, Hutagalung, Sabar D, Saion, Elias B, Hamidon, Mohd N, Hassan, Jumiah, Gharayebi, Yadollah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3489690/
https://www.ncbi.nlm.nih.gov/pubmed/22781031
http://dx.doi.org/10.1186/1556-276X-7-381

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3489690/
https://www.ncbi.nlm.nih.gov/pubmed/22781031
http://dx.doi.org/10.1186/1556-276X-7-381

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