An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells

In this study, we investigate the effect of annealing and nitrogen amount on electronic transport properties in n- and p-type-doped Ga(0.68)In(0.32)N(y)As(1 − y)/GaAs quantum well (QW) structures with y = 0%, 0.9%, 1.2%, 1.7%. The samples are thermal annealed at 700°C for 60 and 600 s, and Hall effe...

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Detalles Bibliográficos
Autores principales: Sarcan, Fahrettin, Donmez, Omer, Gunes, Mustafa, Erol, Ayse, Arikan, Mehmet Cetin, Puustinen, Janne, Guina, Mircea
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3492066/
https://www.ncbi.nlm.nih.gov/pubmed/23009196
http://dx.doi.org/10.1186/1556-276X-7-529

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3492066/
https://www.ncbi.nlm.nih.gov/pubmed/23009196
http://dx.doi.org/10.1186/1556-276X-7-529

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