Initial stage growth of Ge(x)Si(1−x) layers and Ge quantum dot formation on Ge(x)Si(1−x) surface by MBE

Critical thicknesses of two-dimensional to three-dimensional growth in Ge(x)Si(1−x) layers were measured as a function of composition for different growth temperatures. In addition to the (2 × 1) superstructure for a Ge film grown on Si(100), the Ge(x)Si(1−x) layers are characterized by the formatio...

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Detalles Bibliográficos
Autores principales: Nikiforov, Aleksandr I, Timofeev, Vyacheslav A, Teys, Serge A, Gutakovsky, Anton K, Pchelyakov, Oleg P
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3492111/
https://www.ncbi.nlm.nih.gov/pubmed/23043796
http://dx.doi.org/10.1186/1556-276X-7-561

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3492111/
https://www.ncbi.nlm.nih.gov/pubmed/23043796
http://dx.doi.org/10.1186/1556-276X-7-561

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