Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial...

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Detalles Bibliográficos
Autores principales: Kozlova, N.V., Mori, N., Makarovsky, O., Eaves, L., Zhuang, Q.D., Krier, A., Patanè, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3493639/
https://www.ncbi.nlm.nih.gov/pubmed/23033073
http://dx.doi.org/10.1038/ncomms2106

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3493639/
https://www.ncbi.nlm.nih.gov/pubmed/23033073
http://dx.doi.org/10.1038/ncomms2106

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