Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not...

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Detalles Bibliográficos
Autores principales: Chen, Zi-Bin, Lei, Wen, Chen, Bin, Wang, Yan-Bo, Liao, Xiao-Zhou, Tan, Hoe H, Zou, Jin, Ringer, Simon P, Jagadish, Chennupati
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494528/
https://www.ncbi.nlm.nih.gov/pubmed/22935541
http://dx.doi.org/10.1186/1556-276X-7-486

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494528/
https://www.ncbi.nlm.nih.gov/pubmed/22935541
http://dx.doi.org/10.1186/1556-276X-7-486

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