Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not...

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Detalles Bibliográficos
Autores principales: Chen, Zi-Bin, Lei, Wen, Chen, Bin, Wang, Yan-Bo, Liao, Xiao-Zhou, Tan, Hoe H, Zou, Jin, Ringer, Simon P, Jagadish, Chennupati
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494528/
https://www.ncbi.nlm.nih.gov/pubmed/22935541
http://dx.doi.org/10.1186/1556-276X-7-486
Descripción
Sumario:InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted in substrate surface moving down about 2 nm. As such, caution is needed in explaining the observed interfacial structure.

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