Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not...

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Detalles Bibliográficos
Autores principales: Chen, Zi-Bin, Lei, Wen, Chen, Bin, Wang, Yan-Bo, Liao, Xiao-Zhou, Tan, Hoe H, Zou, Jin, Ringer, Simon P, Jagadish, Chennupati
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494528/
https://www.ncbi.nlm.nih.gov/pubmed/22935541
http://dx.doi.org/10.1186/1556-276X-7-486
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author Chen, Zi-Bin
Lei, Wen
Chen, Bin
Wang, Yan-Bo
Liao, Xiao-Zhou
Tan, Hoe H
Zou, Jin
Ringer, Simon P
Jagadish, Chennupati
author_facet Chen, Zi-Bin
Lei, Wen
Chen, Bin
Wang, Yan-Bo
Liao, Xiao-Zhou
Tan, Hoe H
Zou, Jin
Ringer, Simon P
Jagadish, Chennupati
author_sort Chen, Zi-Bin
collection PubMed
description InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted in substrate surface moving down about 2 nm. As such, caution is needed in explaining the observed interfacial structure.
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spelling pubmed-34945282012-11-13 Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots? Chen, Zi-Bin Lei, Wen Chen, Bin Wang, Yan-Bo Liao, Xiao-Zhou Tan, Hoe H Zou, Jin Ringer, Simon P Jagadish, Chennupati Nanoscale Res Lett Nano Express InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted in substrate surface moving down about 2 nm. As such, caution is needed in explaining the observed interfacial structure. Springer 2012-08-31 /pmc/articles/PMC3494528/ /pubmed/22935541 http://dx.doi.org/10.1186/1556-276X-7-486 Text en Copyright ©2012 Chen et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Chen, Zi-Bin
Lei, Wen
Chen, Bin
Wang, Yan-Bo
Liao, Xiao-Zhou
Tan, Hoe H
Zou, Jin
Ringer, Simon P
Jagadish, Chennupati
Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
title Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
title_full Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
title_fullStr Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
title_full_unstemmed Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
title_short Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
title_sort can misfit dislocations be located above the interface of inas/gaas (001) epitaxial quantum dots?
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494528/
https://www.ncbi.nlm.nih.gov/pubmed/22935541
http://dx.doi.org/10.1186/1556-276X-7-486
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