Cargando…

Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not...

Descripción completa

Detalles Bibliográficos
Autores principales:	Chen, Zi-Bin, Lei, Wen, Chen, Bin, Wang, Yan-Bo, Liao, Xiao-Zhou, Tan, Hoe H, Zou, Jin, Ringer, Simon P, Jagadish, Chennupati
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2012
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494528/ https://www.ncbi.nlm.nih.gov/pubmed/22935541 http://dx.doi.org/10.1186/1556-276X-7-486

Ejemplares similares

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
por: Kiravittaya, S, et al.
Publicado: (2006)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
por: Milekhin, Alexander, et al.
Publicado: (2012)

Evolution of wetting layer in InAs/GaAs quantum dot system
por: Chen, YH, et al.
Publicado: (2006)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
por: Maximov, Mikhail V, et al.
Publicado: (2014)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
por: Benyahia, D., et al.
Publicado: (2018)

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
por: Zhou, Xiaolong, et al.
Publicado: (2011)

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
por: Jallipalli, A, et al.
Publicado: (2009)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
por: Su, Xiang-Bin, et al.
Publicado: (2018)

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
por: Paladugu, M, et al.
Publicado: (2009)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
por: Strom, NW, et al.
Publicado: (2007)

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs
por: Tommila, Juha, et al.
Publicado: (2012)

Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
por: Dai, Liping, et al.
Publicado: (2015)

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
por: Liu, Yao, et al.
Publicado: (2015)

Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
por: Zhang, Hongyi, et al.
Publicado: (2012)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
por: Wang, L, et al.
Publicado: (2006)

Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
por: Helfrich, Mathieu, et al.
Publicado: (2011)

Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012)

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
por: Du, Yong, et al.
Publicado: (2022)

Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode
por: Li, Shulun, et al.
Publicado: (2020)

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators
por: Lee, Shuh Ying, et al.
Publicado: (2013)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
por: Liang, BL, et al.
Publicado: (2007)

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
por: Utrilla, Antonio D, et al.
Publicado: (2014)

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy
por: Li, Ming-Yu, et al.
Publicado: (2012)

Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
por: Xu, Hong-yi, et al.
Publicado: (2012)

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography
por: Ilahi, Bouraoui, et al.
Publicado: (2016)

Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
por: Benyoucef, Mohamed, et al.
Publicado: (2012)

Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers
por: Zhao, HX, et al.
Publicado: (2010)

Optical characterization of In-flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm
por: Kitamura, Shigehiro, et al.
Publicado: (2015)

InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application
por: Li, Qi-zhu, et al.
Publicado: (2018)

Quantitative strain analysis of InAs/GaAs quantum dot materials
por: Vullum, Per Erik, et al.
Publicado: (2017)

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering
por: Chebotarev, Sergei N, et al.
Publicado: (2017)

Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing
por: Zhao, Hanxue, et al.
Publicado: (2011)

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate
por: Huang, Xiaoying, et al.
Publicado: (2021)

InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition
por: Li, Senlin, et al.
Publicado: (2013)

Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy
por: Hsu, Chao-Wei, et al.
Publicado: (2012)

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
por: Zhang, X, et al.
Publicado: (2010)

Cannot write session to /tmp/vufind_sessions/sess_emq43slv68buhbi90958c0jpt2